1 tm file number 4857 caution: these devices are sensitive to electrostatic discharge; follow proper esd handling procedures. 1-888-intersil or 321-724-7143 | intersil and design is a trademark of intersil corporation. | copyright intersil corporation 2000 HGT1S14N37G3VLS, hgtp14n37g3vl 14a, 370v n-channel, logic level, voltage clamping igbts this n-channel igbt is a mos gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. unique features include an active voltage clamp between the collector and the gate which provides self clamped inductive switching (scis) capability in ignition circuits. internal diodes provide esd protection for the logic level gate. both a series resistor and a shunt resister are provided in the gate circuit. formerly developmental type ta49169. symbol features logic level gate drive internal voltage clamp esd gate protection ? j = 175 o c internal series and shunt gate resistors low conduction loss ignition energy capable packaging jedec to-263ab jedec to-220ab ordering information part number package brand HGT1S14N37G3VLS to-263ab 14n37gvl hgtp14n37g3vl to-220ab 14n37gvl note: when ordering, use the entire part number. add the suf? 9a to obtain the to-263ab in tape and reel, i.e. HGT1S14N37G3VLS9a emitter gate r 2 r 1 collector collector (flange) e g c g e collector (flange) intersil corporation igbt product is covered by one or more of the following u.s. patents 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 data sheet july 2000
2 absolute maximum ratings t c = 25 o c, unless otherwise speci?d HGT1S14N37G3VLS, hgtp14n37g3vl units collector to emitter breakdown voltage at 10ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . bv cer 380 v emitter to collector breakdown voltage at 10ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . .bv ecs 24 v collector current continuous at v ge = 5v, t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . i c25 25 a at v ge = 5v, t c = 110 o c . . . . . . . . . . . . . . . . . . . . . . . . i c110 18 a gate to emitter voltage (note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v gem 10 v inductive switching current at l = 3mh, t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . i scis 15 a at l = 3mh, t c = 150 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . i scis 11.5 a collector to emitter avalanche energy at l = 3 mh, t c = 25 o c . . . . . . . . . . . . . . . . . . . . e as 340 mj power dissipation total at t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p d 136 w power dissipation derating t c > 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.91 w/ o c storage junction temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t stg -55 to 175 o c operating junction temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t j -55 to 175 o c electrostatic voltage hbm at 250pf, 1500 ? all pin con?urations. . . . . . . . . . . . . . . . . .esd 5 kv electrostatic voltage mm at 200pf, 0 ? all pin con?urations. . . . . . . . . . . . . . . . . . . . . .esd 2 kv maximum lead temperature for soldering leads at 0.063in (1.6mm) from case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t l package body for 10s, see techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t pkg 300 260 o c o c caution: stresses above those listed in ?bsolute maximum ratings may cause permanent damage to the device. this is a stress only rating and operatio n of the device at these or any other conditions above those indicated in the operational sections of this speci?ation is not implied. note: 1. may be exceeded if i gem is limited to 10ma. electrical speci?ations t j = 25 o c, unless otherwise speci?d parameter symbol test conditions min typ max units collector to emitter breakdown voltage bv cer i c = 10ma, r g = 1k ?, v ge = 0v, t j = -55 o c to 175 o c (figure 16) 320 350 380 v gate to emitter plateau voltage v gep i c = 6.5a, v ce = 12v - 2.76 - v gate charge q g(on) i c = 6.5a, v ce = 12v, v ge = 5v (figure 16) -27 - nc collector to emitter clamp breakdown voltage bv ce(cl) i c = 15a, r g = 1k ? 320 350 380 v emitter to collector breakdown voltage bv ecs i c = 10ma 24 28 - v collector to emitter leakage current i ces v ce = 300v, v ge = 0v (figure 13) t j = 25 o c- - 40 a t j = 175 o c - - 250 a v ce = 250v, v ge = 0v (figure 13) t j = 25 o c- - 10 a t j = 175 o c- - 75 a emitter to collector leakage current i ecs v ec = -24v, v ge = 0v (figure 13) t j = 25 o c- - 10 ma t j = 175 o c- - 50 ma collector to emitter on-state voltage v ce(on) i c = 6a, v ge = 4.0v (figures 3 through 9) t j = -55 o c - 1.3 1.45 v t j = 25 o c - 1.25 1.6 v i c = 10a, v ge = 4.5v (figures 3 through 9) t j = 25 o c - 1.45 1.75 v t j = 175 o c - 1.5 1.9 v i c = 14a, v ge = 5v (figures 3 through 9) t j = 25 o c - 1.6 2 v t j = 175 o c - 1.7 2.3 v gate to emitter threshold voltage v ge(th) i c = 1ma, v ce = v ge (figure 12) 1.3 1.8 2.2 v gate series resistance r 1 - 70 150 ? gate to emitter resistance r 2 10 18 26 k ? gate to emitter leakage current i ges v ge = 10v 310 500 1000 a HGT1S14N37G3VLS, hgtp14n37g3vl
3 gate to emitter breakdown voltage bv ges i ges = 2ma 12 14 - v current turn-on delay time - resistive load t d(on)i i c = 6.5a, r g = 1k ? , v ge = 5v, r l = 2.1 ? , v dd = 14v, t j = 150 o c (figure 14) -14 s current turn-on rise time - resistive load t ri i c = 6.5a, r g = 1k ? v ge = 5v, r l = 2.1 ? v dd = 14v, t j = 150 o c (figure 14) -37 s current turn-off time - inductive load t d(off)i + t fi i c = 6.5a, r g = 1k ? v ge = 5v, l = 300 h v dd = 300v, t j = 150 o c (figure 14) -1030 s inductive use test i scis l = 3mh, v g = 5v, r g = 1k ? (figures 1 and 2) t c = 150 o c 11.5 - - a t c = 25 o c15 - - a thermal resistance r jc (figure 18) - - 1.1 o c/w electrical speci?ations t j = 25 o c, unless otherwise speci?d (continued) parameter symbol test conditions min typ max units typical performance curves unless otherwise speci?d figure 1. self clamped inductive switching current vs time in avalanche figure 2. self clamped inductive switching current vs inductance figure 3. collector to emitter on-state voltage vs junction temperarure figure 4. collector to emitter on-state voltage vs junction temperature 12 4 44 20 i scis , inductive switching current (a) 40 160 200 120 80 t av , time in avalanche (ms) 28 36 52 60 r g = 1k ? , v ge = 5v i scis can be limited by gfs at v ge = 5v t j = 25 o c t j = 150 o c l, inductance (mh) 24 0 i scis , inductive switching current (a) 8 68 4 210 0 32 40 16 48 56 t j = 25 o c t j = 150 o c r g = 1k ? , v ge = 5v i scis can be limited by gfs at v ge = 5v t j , junction temperature ( o c) 1.08 1.00 1.20 1.28 v ce , collector to emitter voltage (v) -50 25 100 175 1.04 1.12 1.16 1.24 i ce = 6a v ge = 4.0v v ge = 4.5v v ge = 5.0v t j , junction temperature ( o c) -50 25 100 175 1.38 1.30 1.50 1.34 1.42 1.46 v ce , collector to emitter voltage (v) i ce = 10a v ge = 5.0v v ge = 4.0v v ge = 4.5v HGT1S14N37G3VLS, hgtp14n37g3vl
4 figure 5. collector to emitter on-state voltage figure 6. collector to emitter on-state voltage figure 7. collector to emitter on-state voltage figure 8. collector to emitter on-state voltage figure 9. collector to emitter on-state voltage figure 10. transfer characteristic typical performance curves unless otherwise speci?d (continued) 1 v ce , collector to emitter voltage (v) 15 0 23 30 5 4 45 i ce , collector to emitter current (a) 0 pulse duration = 250 s duty cycle < 0.5%, t j = 175 o c v ge = 5.0v v ge = 4.0v v ge = 4.5v v ce , collector to emitter voltage (v) i ce , collector to emitter current (a) 012 5 0 30 34 15 45 pulse duration = 250 s duty cycle < 0.5%, t j = 150 o c v ge = 5.0v v ge = 4.0v v ge = 4.5v 023 v ce , collector to emitter voltage (v) i ce , collector to emitter current (a) 0 10 20 45 50 30 60 1 40 pulse duration = 250 s duty cycle < 0.5%, t j = 25 o c v ge = 5.0v v ge = 4.5v v ge = 4.0v i ce , collector to emitter current (a) v ce , collector to emitter voltage (v) 0 20 40 60 50 70 0234 1 10 30 pulse duration = 250 s duty cycle < 0.5%, t j = -40 o c 5 v ge = 5.0v v ge = 4.5v v ge = 4.0v v ce , collector to emitter voltage (v) 0 10 40 30 20 50 60 3 245 01 i ce , collector to emitter current (a) v ge 8.0v 5.0v 4.5v 4.0v 3.5v 3.0v 2.5v t j = 25 o c 0 32 40 2 1345 16 8 24 v ge , gate to emitter voltage (v) i ce , collector to emitter current (a) pulse duration = 250 s duty cycle < 0.5%, v ce = 5v t j = 150 o c t j = -40 o c t j = 25 o c HGT1S14N37G3VLS, hgtp14n37g3vl
5 figure 11. dc collector current vs case temperature figure 12. threshold voltage vs junction temperature figure 13. leakage current vs junction temperature figure 14. switching time vs junction temperature figure 15. capacitance vs collector to emitter voltage figure 16. gate charge waveforms typical performance curves unless otherwise speci?d (continued) 8 4 t c , case temperature ( o c) i ce , dc collector current (a) 16 24 12 50 25 75 100 125 150 20 28 0 175 v ge = 5v v ge(th) , threshold voltage (v) 0.8 1.2 1.6 1.0 1.4 1.8 2.0 -50 25 100 175 t j , junction temperature ( o c) i ce = 1ma v ce = v ge leakage currents ( a) 0.1 10 100 25 50 75 100 150 t j , junction temperature ( o c) 125 1000 10000 1 175 v ecs = 24v v ces = 300v v ces = 250v switching time ( s) t j , junction temperature ( o c) 2 14 4 10 6 8 12 16 25 50 75 100 150 125 175 resistive t off inductive t off resistive t on i ce = 6.5a, v ge = 5v, r g = 1k ? v ce , collector to emitter voltage (v) c, capacitance (pf) 0 5 10 15 20 25 0 800 1600 2000 1200 2400 400 frequency = 1mhz c res c oes c ies 0 16 40 q g , gate charge (nc) 4 056 v ge , gate to emitter voltage (v) 8 8243248 2 6 i g(ref) = 1ma, r l = 1.865 ? , t j = 25 o c v ce = 12v v ce = 6v HGT1S14N37G3VLS, hgtp14n37g3vl
6 figure 17. breakdown voltage vs series gate resistance figure 18. igbt normalized transient thermal response, junction to case typical performance curves unless otherwise speci?d (continued) r g , gate series resistance (k ? ) bv cer , breakdown voltage (v) 4 330 320 360 340 350 26810 0 i cer = 10ma t j ( o c) -55 25 150 175 t 1 , rectangular pulse duration (s) z jc , normalized thermal response 10 -2 10 -1 10 0 10 -5 10 -3 10 -2 10 -1 10 0 10 -4 t 1 t 2 p d duty factor, d = t 1 / t 2 peak t j = (p d x z jc x r jc ) + t c single pulse 0.1 0.2 0.5 0.05 0.01 0.02 test circuits figure 19. inductive switching test circuit figure 20. t on and t off switching test circuit r g g c e v dd 3mh pulse gen dut r g = 1k ? + - v dd dut 5v c g e load r or l HGT1S14N37G3VLS, hgtp14n37g3vl
7 HGT1S14N37G3VLS, hgtp14n37g3vl to-263ab surface mount jedec to-263ab plastic package to-263ab 24mm tape and reel minimum pad size recommended for surface-mounted applications e a 1 a h 1 d l b e e1 l 2 b 1 l 1 c term. 4 13 1 3 l 3 b 2 term. 4 0.450 0.350 0.150 (3.81) 0.080 typ (2.03) 0.700 (11.43) (8.89) (17.78) 0.062 typ (1.58) j 1 symbol inches millimeters notes min max min max a 0.170 0.180 4.32 4.57 - a 1 0.048 0.052 1.22 1.32 4, 5 b 0.030 0.034 0.77 0.86 4, 5 b 1 0.045 0.055 1.15 1.39 4, 5 b 2 0.310 - 7.88 - 2 c 0.018 0.022 0.46 0.55 4, 5 d 0.405 0.425 10.29 10.79 - e 0.395 0.405 10.04 10.28 - e 0.100 typ 2.54 typ 7 e 1 0.200 bsc 5.08 bsc 7 h 1 0.045 0.055 1.15 1.39 - j 1 0.095 0.105 2.42 2.66 - l 0.175 0.195 4.45 4.95 - l 1 0.090 0.110 2.29 2.79 4, 6 l 2 0.050 0.070 1.27 1.77 3 l 3 0.315 - 8.01 - 2 notes: 1. these dimensions are within allowable dimensions of rev. c of jedec to-263ab outline dated 2-92. 2. l 3 and b 2 dimensions established a minimum mounting surface for terminal 4. 3. solder finish uncontrolled in this area. 4. dimension (without solder). 5. add typically 0.002 inches (0.05mm) for solder plating. 6. l 1 is the terminal length for soldering. 7. position of lead to be measured 0.120 inches (3.05mm) from bottom of dimension d. 8. controlling dimension: inch. 9. revision 10 dated 5-99. 2.0mm 4.0mm 1.75mm 1.5mm dia. hole c l user direction of feed 16mm 24mm 330mm 100mm 13mm 30.4mm 24.4mm cover tape general information 1. 800 pieces per reel. 2. order in multiples of full reels only. 3. meets eia-481 revision "a" specifications. access hole 40mm min.
8 all intersil semiconductor products are manufactured, assembled and tested under iso9000 quality systems certi?ation. intersil semiconductor products are sold by description only. intersil corporation reserves the right to make changes in circuit design and/or spec ifications at any time with- out notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furnished by intersil is b elieved to be accurate and reliable. however, no responsibility is assumed by intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of th ird parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of intersil or its subsidiari es. for information regarding intersil corporation and its products, see web site www.intersil.com sales of?e headquarters north america intersil corporation p. o. box 883, mail stop 53-204 melbourne, fl 32902 tel: (321) 724-7000 fax: (321) 724-7240 europe intersil sa mercure center 100, rue de la fusee 1130 brussels, belgium tel: (32) 2.724.2111 fax: (32) 2.724.22.05 asia intersil ltd. 8f-2, 96, sec. 1, chien-kuo north, taipei, taiwan 104 republic of china tel: 886-2-2515-8508 fax: 886-2-2515-8369 HGT1S14N37G3VLS, hgtp14n37g3vl to-220ab 3 lead jedec to-220ab plastic package lead terminal lead no. 1 gate lead no. 2 collector lead no. 3 emitter term. no. 4 mounting flange collector e p q d h 1 e 1 l l 1 60 o b 1 b 1 2 3 e e 1 a c j 1 45 o d 1 a 1 term. 4 symbol inches millimeters notes min max min max a 0.170 0.180 4.32 4.57 - a 1 0.048 0.052 1.22 1.32 - b 0.030 0.034 0.77 0.86 3, 4 b 1 0.045 0.055 1.15 1.39 2, 3 c 0.014 0.019 0.36 0.48 2, 3, 4 d 0.590 0.610 14.99 15.49 - d 1 - 0.160 - 4.06 - e 0.395 0.410 10.04 10.41 - e 1 - 0.030 - 0.76 - e 0.100 typ 2.54 typ 5 e 1 0.200 bsc 5.08 bsc 5 h 1 0.235 0.255 5.97 6.47 - j 1 0.100 0.110 2.54 2.79 6 l 0.530 0.550 13.47 13.97 - l 1 0.130 0.150 3.31 3.81 2 p 0.149 0.153 3.79 3.88 - q 0.102 0.112 2.60 2.84 - notes: 1. these dimensions are within allowable dimensions of rev. j of jedec to-220ab outline dated 3-24-87. 2. lead dimension and finish uncontrolled in l 1 . 3. lead dimension (without solder). 4. add typically 0.002 inches (0.05mm) for solder coating. 5. position of lead to be measured 0.250 inches (6.35mm) from bot- tom of dimension d. 6. position of lead to be measured 0.100 inches (2.54mm) from bot- tom of dimension d. 7. controlling dimension: inch. 8. revision 2 dated 7-97.
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